vsmy7850x01 www.vishay.com vishay semiconductors rev. 1.0, 27-jun-11 1 document number: 81145 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high power infrared emitting diode, 850 nm, surface emitter technology description vsmy7850x01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance little star package. a 42 mil chip provides outstanding low forward voltage and allows dc operation of the device up to 1 a. features ? package type: surface mount ? package form: little star ? ? dimensions (l x w x h in mm): 6.0 x 7.0 x 1.5 ? peak wavelength: ? p = 850 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 60 ? low forward voltage ? designed for high drive currents: up to 1 a dc and up to 5 a pulses ? low thermal resistance: r thjp = 10 k/w ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? lead (pb)-free reflow soldering ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? infrared illumination for cmos cameras (cctv) ? driver assistance systems ? machine vision ir data transmission ?3d tv note ? test conditions see table basic characteristics note ? moq: minimum order quantity 21783 217 83 product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) vsmy7850x01 170 60 850 20 ordering information ordering code packaging remarks package form vsmy7850x01-gs08 tape and reel moq: 2000 pcs, 2000 pcs/reel little star absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 1a peak forward current t p /t = 0.5, t p ? 100 s i fm 2a surge forward current t p = 100 s i fsm 5a power dissipation p v 2.5 w junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. figure 7, j-std-20 t sd 260 c thermal resistance junc tion/pin acc. j-std-051, soldered on pcb r thjp 10 k/w
vsmy7850x01 www.vishay.com vishay semiconductors rev. 1.0, 27-jun-11 2 document number: 81145 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature t amb - ambient temperature (c) p v - power dissipation (w) 0 0.5 1 1.5 2 2.5 3 0 20406080100120 r thjp = 10 k/w t amb - ambient temperature (c) i f - forward current (a) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20406080100120 r thjp = 10 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 1 a, t p = 20 ms v f 2.0 2.5 v i f = 5 a, t p = 100 s v f 3.5 v temperature coefficient of v f i f = 1 a tk vf - 0.2 mv/k reverse current v r = 5 v i r not designed for reverse operation a radiant intensity i f = 1 a, t p = 20 ms i e 130 170 390 mw/sr i f = 5 a, t p = 100 s i e 780 mw/sr radiant power i f = 1 a, t p = 20 ms ? e 520 mw temperature coefficient of ? e i f = 1 a tk ? e - 0.5 %/k angle of half intensity ? 60 deg peak wavelength i f = 1 a ? p 850 nm spectral bandwidth i f = 1 a ?? 30 nm temperature coefficient of ? p i f = 1 a tk ? p 0.2 nm/k rise time i f = 1 a t r 15 ns fall time i f = 1 a t f 18 ns
vsmy7850x01 www.vishay.com vishay semiconductors rev. 1.0, 27-jun-11 3 document number: 81145 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - radiant intensity vs. forward current fig. 5 - relative radi ant power vs. wavelength fig. 6 - relative radiant in tensity vs. angular displacement 0.001 0.01 0.1 1 10 01234 i f - forward current (a) v f - forward voltage (v) t p = 100 s i f - forward current (a) i e - radiant intensity (mw/sr) 1 10 100 1000 0.01 0.1 1 10 t p = 100 s - wavelength (nm) 21776 e, rel - relative radiant power 0 0.25 0.5 0.75 1 650 750 850 950 0.4 0.2 0 i e, rel - relative radiant intensity 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement
vsmy7850x01 www.vishay.com vishay semiconductors rev. 1.0, 27-jun-11 4 document number: 81145 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 taping dimensions in millimeters 20846
vsmy7850x01 www.vishay.com vishay semiconductors rev. 1.0, 27-jun-11 5 document number: 81145 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters 20848
vsmy7850x01 www.vishay.com vishay semiconductors rev. 1.0, 27-jun-11 6 document number: 81145 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 solder profile fig. 7 - lead (pb)-free reflow solder profile ac c. j-std-020 for preconditioning acc. to jedec, level 2a drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 4 weeks conditions: t amb < 30 c, rh < 60 % moisture sensitivity leve l 2a, acc. to j-std-020b drying in case of moisture absorpti on devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
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